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IMPATT technology
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100 GHz, 140 GHz, 200 GHz and 300 GHz available frequencies
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High power output
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Protective isolator for enhanced stability
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Low cost and compact size
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1 year warranty
Terahertz generator description
The TeraSense series of terahertz sources (IMPATT diodes) is represented by silicon double drift diodes with a 0.6 um transit region, mounted on a copper heat sink. The layers in double-drift diodes are: a heavily doped (p+)-region, a moderately doped pregion, a moderately doped n-region, and a heavily doped (n+)-region. The (p+)-and (n+)-regions allow ohmic electrical contacts to be made to the external circuit. The device relies on negative resistance to generate and sustain an oscillation.
TeraSense is now offering its upgraded version of terahertz generators. The upgraded thz generator is outfitted with a protective isolator, which significantly improves output power stability. From now on you can order a THz source with either a rigidly fixed horn antenna or WR-flange of your choice. The typical output rf power of the generator with optimized frequency at 100 GHz can reach up to 100 mW. This allows them to be used together with multipliers to reach frequencies in the far terahertz spectral range.
In addition, TeraSense sources feature ergonomic design and ease of use. The company can optionally supply a THz generator with attenuator and switch sections.
THz source 100 GHz
~ 80 mW
180 mW
400 mW
0.8 W
output rf power
Conical horn antenna /
Flange type output
Protective Isolator
TTL Modulation
THz source 140 GHz
~ 30 mW
90 mW
180 mW
output rf power
Conical horn antenna /
Flange type output
Protective Isolator
TTL Modulation
THz source 200 GHz
> 40 mW
100 mW
200 mW
output rf power
Diagonal horn antenna /
Flange type output
TTL Modulation
THz source 300 GHz
290 GHz ~ 10 mW
280 GHz > 20 / 40 mW
output rf power
Diagonal horn antenna /
Flange type output
TTL Modulation
